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A Product Line of
Diodes Incorporated
ZXMC3AMC
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Symbol
N-channel – Q1 P-channel – Q2
Unit
Drain-Source Voltage
Gate-Source Voltage
V DSS
V GSS
30
±20
-30
±20
V
(Notes 4 & 7)
3.7 -2.7
Continuous Drain Current
Pulsed Drain Current
V GS = 10V
V GS = 10V
T A = 70°C (Notes 4 & 7)
(Notes 3 & 7)
(Notes 6 & 7)
I D
I DM
3.0 -2.2
2.9 -2.1
13 -9.2
A
Continuous Source Current (Body diode)
Pulse Source Current (Body diode)
(Notes 4 & 7)
(Notes 6 & 7)
I S
I SM
3.2 -2.8
13 -9.2
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Notes 3 & 7)
Symbol
N-channel – Q1 P-channel – Q2
1.50
12
Unit
Power Dissipation
Linear Derating Factor
(Notes 4 & 7)
(Notes 5 & 7)
P D
2.45
19.6
1.13
9
W
mW/°C
(Notes 5 & 8)
(Notes 3 & 7)
1.70
13.6
83.3
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
(Notes 5 & 7)
R θ JA
51.0
111
°C/W
(Notes 5 & 8)
73.5
Thermal Resistance, Junction to Lead
(Notes 7 & 9)
R θ JL
17.1
Operating and Storage Temperature Range
T J , T STG
-55 to +150
°C
3. For a device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
Notes:
2
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.
4. Same as note (3) except the device is measured at t < 5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm 2 ) FR4 PCB with high coverage of single sided 1oz copper.
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
2 of 11
www.diodes.com
December 2010
? Diodes Incorporated
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